Improved Efficiency of Perovskite Solar Cells with Low‐Temperature‐Processed Carbon by Introduction of a Doping‐Free Polymeric Hole Conductor

Low-temperature-processed carbon-based perovskite solar cells (C-PSCs) are promising photovoltaic devices, because of their good stability, low cost, and simple preparation methods, which allow for scalable processing. Herein, C-PSCs with the n−i−p structure prepared, using a SnO2 nanoparticles film as electron-selective contact, MAPbI3 intrinsic absorber layer (MA = methylammonium), carbon hole-selective conductor. Carbon is, however, not an ideal it is found that improved cell performance can be obtained by introducing polymeric hole conductor between layer. Specifically, undoped poly(3-hexylthiophene) (P3HT) used this purpose, stable highly hydrophobic. For ITO/SnO2/MAPbI3/carbon efficiency up to 12.8% obtained, increasing 15.7% inclusion P3HT layer, increases open-circuit potential, photocurrent, fill factor (FF). In comparison, ITO/SnO2/MAPbI3/P3HT/Au devices performed rather poorly (up 11.7%). Encouraging stability unencapsulated C-PSC devices: P3HT/carbon do show any degradation in upon storage 1 month humidity, while they maintain 70% initial after 900 h at 82 °C air.